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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viv..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android ..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ired for most semiconductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline.

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Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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t is plane transmission diffraction grating?
A plane transmission diffraction grating is an optically plane parallel glass plate on which equidistant,
extremely close grooves are made by ruling with a diamond point.

2. In our experiment. What class of diffraction does occur and how?
Fraunhofer class of diffraction occurs. Since the spectrometer is focused for parallel rays, the source
and the image are effectively at infinite distances from the grating.

3. How are the commercial gratings are made?
A commercial gratings is made by pouring properly diluted cellulose ..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
, the hole vanishes and the electron is no longer mobile. Thus, two charge carriers have vanished. The region around the p-n junction becomes depleted of charge carriers and thus behaves as an insulator.
 However, the depletion width cannot grow without limit. For each electron-hole pair that recombines, a positively-charged dopant ion is left behind in the N-doped region, and a negatively charged dopant ion is left behind in the P-doped region. As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone which acts to slow and then ..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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e arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
thods, including radiofre-
39
quency (RF) and direct-current (DC) sputter-
40
ing,
3,13,14
chemical vapor deposition,
15
spray
41
pyrolysis,
16
and electron cyclotron resonance-as-
42
sisted molecular-beam epitaxy,
17
we used pulsed
43
laser deposition (PLD)
1,18,19
to deposit high-quality
44
ZnO films because of its effectiveness and amena-
45
bility to different growth conditions.
20
For the
46
present study we fabricated heterojunctions of
47
n-type ZnO on p-type Si, which has many advanta-
48
ges such as low cost, large wafer size, and the pos-
49
sibility..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
O films were deposited for about
91
30 min on the Si substrates at room temperature.
92
To measure the conductivity and band gap of the
93
ZnO films those were separately deposited on silica
94
substrates under identical experimental conditions
95
as those used for the growth on the Si substrates.
96
For electrical measurements, indium metal contacts
97
were made on both p-type silicon surface and n-type
98
ZnO films, which were found to be ohmic in nature.
99
The room-temperature electrical measurements of
100
the ZnO thin films grown on the silica substrates
101
were ca..................[:=> Show Contents <=:]



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