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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction diode with a..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android based C..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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in an extremely pure germanium or silicon. Impurity of less than one part in ten billion (1010) is required for most semiconductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline.

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Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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ght and dark patches of light obtained in the region of superposition of two wave
trains of light.


SPECTROMETER GRATING

1.what is plane transmission diffraction grating?
A plane transmission diffraction grating is an optically plane parallel glass plate on which equidistant,
extremely close grooves are made by ruling with a diamond point.

2. In our experiment. What class of diffraction does occur and how?
Fraunhofer class of diffraction occurs. Since the spectrometer is focused for parallel rays, the source
and the image are effectively at infinite distance..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
the time of their invention such devices were known as rectifiers. In 1919 William Henry Eccles coined the term diode from Greek roots; di means 'two', and ode (from odos) means 'path'.
 A semiconductor diode's current-voltage, or I-V, characteristic curve is ascribed to the behavior of the so-called depletion layer or depletion zone which exists at the p-n junction between the differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (places for elec..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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rse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it.
Would like to “Equalize” the voltages.






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Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
e. However,
283
under higher forward bias, the barrier difference is
284
lowered and the injection of electrons from the bot-
285
tom of the conduction band on the ZnO side to the
286
p-Si increased considerably (as shown in Fig. 8).
287
Thereby the forward current rapidly increased
288
under a higher voltage bias. When the oxygen
289
pressure during the deposition of ZnO was
290
decreased, the carrier concentration increased and
291
hence the Fermi level shifted towards the bottom of
292
the conduction band. This means that, upon
293
decrease of the oxygen pressure, the ..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
are presented and discussed in this
71
communication.
(Received August 15, 2007; accepted December 3, 2007)
Journal of ELECTRONIC MATERIALS
Special Issue Paper
DOI: 10.1007/s11664-007-0365-4
Ó
2007 TMS
Journal :
11664_JEM
Dispatch :
18-12-2007
Pages : 6
h LE
h TYPESET
Article No.: 365
h CP
h DISK
4
4
Author ProofPage 2

UNCORRECTE
D
PROOF
72
73
EXPERIMENTAL
74
The pulsed laser deposition (PLD) of the ZnO
75
films was carried out in a growth chamber, which
76
was first evacuated to a base pressure of 10
-6
mbar.
77
A polycrystalline, stoichiometri..................[:=> Show Contents <=:]



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