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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction diode with answ..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating syste..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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conductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline.

..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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eter is focused for parallel rays, the source
and the image are effectively at infinite distan..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
behind. The holes ellectively not actually move towards the pn junction.
 This is called hole current.
Effect of Forward Bias on the Depletion Region
 As more electrons flow into the depletion region, the number of positive ions is reduced.
 As more holes effectively flow into the depletion region on the other side of the pn junction, the number of negative ions is reduced.
 This reduction in positive and negative ions during forward bias causes the depletion region to narrow.
Effect of the Barrier Potential During Forward Bias
 When forward bias is ap..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between device..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
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mbar to
88
0.007 mbar during the growth of different samples.
89
The substrate-to-target distance was kept at about
90
4.5 cm. The ZnO films were deposited for about
91
30 min on the Si substrates at room temperature.
92
To measure the conductivity and band gap of the
93
ZnO films those were separately deposited on silica
94
substrates under identical experimental conditions
95
as those used for the growth on the Si substrates.
96
For electrical measurements, indium metal contacts
97
were made on both p-type silicon surface and n-type
98
ZnO films, which were found to be..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
10.1007/s11664-007-0365-4
Ó
2007 TMS
Journal :
11664_JEM
Dispatch :
18-12-2007
Pages : 6
h LE
h TYPESET
Article No.: 365
h CP
h DISK
4
4
Author ProofPage 2

UNCORRECTE
D
PROOF
72
73
EXPERIMENTAL
74
The pulsed laser deposition (PLD) of the ZnO
75
films was carried out in a growth chamber, which
76
was first evacuated to a base pressure of 10
-6
mbar.
77
A polycrystalline, stoichiometric, sintered (for 5 h at
78
1200°C) pellet of ZnO with a purity of 99.999% was
79
used as the target for PLD. The third harmonics
80
(355 nm) of a Q-switched ..................[:=> Show Contents <=:]



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