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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junct..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, An..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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nce of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less than one part in ten billion (1010) is required for most semiconductor device fabrication to-day.

3.2 Wafer ..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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e on which equidistant,
extremely close grooves are made by ruling with a diamond point.

2. In our experiment. What class of diffraction does occur and how?
Fraunhofer class of diffraction occurs. Since the spectrometer is focused for parallel rays, the source
and the image are effectively at infinite distances from the grating.

3. How are the commercial gratings are made?
A commercial gratings is made by pouring properly diluted cellulose acetate on the actual grating and
drying it to a thin strong film. The film is detached from the original grating and is mounted be..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee on November 16, 1904. Pickard received a patent for a silicon crystal detector on November 20, 1906.
 At the time of their invention such devices were known as rectifiers. In 1919 William Henry Eccles coined the term diode from Greek roots; di means 'two', and ode (from odos) means 'path'.
 A semiconductor diode's current-voltage, or I-V, characteristic curve is ascribed to the behavior of the so-called depletion layer or depletion zone which exists at the p-n j..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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osite to the arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Ch..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
junc-
234
tion diode with the lowest turn-on voltage is plotted
235
on a logarithmic scale in Fig. 6. The maximum for-
236
ward-to-reverse current ratio was found to be about
237
1,000 in the range of applied voltage from -5 V to
238
+5 V. The inset to Fig. 6 shows the ohmic nature of
239
the In/ZnO contact. The room-temperature leakage
240
current at -5 V was of the order of 10
-7
A. The
241
ideality factor was found to be greater than 10 for all
242
the heterojunctions fabricated.
243
The band structure of n-ZnO/p-Si at the hetero-
244
junction can be constructed usin..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
that increase of oxygen pressure
215
during deposition enhanced the O/Zn ratio in the ZnO
216
thin films. From the XPS and Hall measurement data
Fig. 3. The variation of the electron concentration in the ZnO films
(obtained from the Hall measurement and theoretical model using
the BM shift) with oxygen pressure.
Fig. 4. XPS of O 1s ZnO thin films deposited at 0.007 mbar and
0.003 mbar oxygen pressures.
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown
by Pulsed Laser Deposition at Different Oxygen Pressures
Journal :
11664_JEM
Dispatch :
18-12-2007
Pages : 6..................[:=> Show Contents <=:]



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