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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction diode with an..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating sys..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ircuits (silicon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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light when it is
forward biased.

2. What is LASER?
The term LASER stands for Light Amplification by Stimulated Emission of Radiation. It is a device
which produces a powerful, monochromatic collimated beam of light in which the waves are coherent.

3. What are the characteristic of laser radiation?
Laser radiations have high intensity, high coherence, high monochoromation and high directionality
with less divergence.


AIR WEDGE



1.What is meant by interference of light?
When the two waves superimpose over each other, resultant intensity is modif..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
a process called reverse breakdown occurs which causes the device to be damaged along with a large increase in current. For special purpose diodes like the avalanche or zener diodes, the concept of PIV is not applicable since they have a deliberate breakdown beyond a known reverse current such that the reverse voltage is clamped to a known value (called the zener voltage or breakdown voltage). These devices however have a maximum limit to the current and power in the zener or avalanche region.
Some types of semiconductor diode
 Laser diodes
– When an LED-like structure is..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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o the arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics[..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
was found to decrease from about
156
3.2 · 10
19
cm
-3
to 1.32 · 10
18
cm
-3
when the oxygen
157
pressure was increased from 0.003 mbar to
158
0.007 mbar, as shown in Fig. 3. A theoretical curve
159
based on the calculated values of the carrier con-
160
centration from the Burstein-Moss (BM) shift
29
is
161
also shown in this figure. With a small gap between
162
the two curves, the trend of experimental data and
163
that of the calculated ones coincide reasonably well.
164
As seen from Fig. 2a the band gap of the ZnO
165
films decreased with incre..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
tudy we fabricated heterojunctions of
47
n-type ZnO on p-type Si, which has many advanta-
48
ges such as low cost, large wafer size, and the pos-
49
sibility of integrating oxide semiconductors with
50
already highly matured silicon technology.
51
The growth of ZnO on Si substrates has been
52
studied extensively including the epitaxial growth
53
of ZnO on Si (100) substrates,
21
ZnO/p-Si
54
diodes,
22“24
ZnO:N/p-Si heterostructures
25
etc.
55
Studies on the electrical transport properties of
56
ZnO/p-Si heterojunctions with different dopants in
57
the p-Si
2..................[:=> Show Contents <=:]



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