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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questio..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android based Cloud ..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less than one part in ten billion (1010) is required for most semiconductor device fabrication to-day.

3.2 Wafer..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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hat is meant by interference of light?
When the two waves superimpose over each other, resultant intensity is modified. The modification in
the distribution of intensity in the region of superposition is called interference.

2.Is there is any energy loss in interference phenomenon?
No, there is only redistribution of energy ie, energy from dark places is shifted to bright places

3.What are interference fringes?
They are alternately bright and dark patches of light obtained in the region of superposition of two wave
trains of light.


SPECTROMETER GRATING
..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
I-V, characteristic curve is ascribed to the behavior of the so-called depletion layer or depletion zone which exists at the p-n junction between the differing semiconductors. When a p-n junction is first created, conduction band (mobile) electrons from the N-doped region diffuse into the P-doped region where there is a large population of holes (places for electrons in which no electron is present) with which the electrons recombine. When a mobile electron recombines with a hole, the hole vanishes and the electron is no longer mobile. Thus, two charge carriers have vanished. The region aro..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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across it.
Would like to “Equalize” the voltages.






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Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
s is well known, this model relies on the
173
effective mass approximation (EMA) in which the
174
wavefunctions are represented by plane waves and
175
the conduction and valance bands are taken to be
176
parabolic near the Brillouin zone. The BM shift in
177
band gap, DE
g
according to this model
29
is given by:
DE
g
¼
h
2
8p
2
1
m
e
þ
1
m
h
3p
2
n
Ã
Á
2=3
(1)
179
180
where m
e
= 0.28 m
e
, m
h
= 0.59 m
e
, h, and n are the
181
effective electron mass, effective hole mass, Planck
182
constant, and electron density per u..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
er identical experimental conditions
95
as those used for the growth on the Si substrates.
96
For electrical measurements, indium metal contacts
97
were made on both p-type silicon surface and n-type
98
ZnO films, which were found to be ohmic in nature.
99
The room-temperature electrical measurements of
100
the ZnO thin films grown on the silica substrates
101
were carried out using the four-probe van der Pau
102
configuration in the Hall geometry.
103
RESULTS AND DISCUSSION
104
The thickness of the deposited ZnO films, mea-
105
sured using a stylus profiler (Dektak 6 M S..................[:=> Show Contents <=:]



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