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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less than one part in ten billion (1010) is required for most semiconductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is made out of extremely ..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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ating?
A plane transmission diffraction grating is an optically plane parallel glass plate on which equidistant,
extremely close grooves are made by ruling with a diamond point.

2. In our experiment. What class of diffraction does occur and how?
Fraunhofer class of diffraction occurs. Since the spectrometer is focused for parallel rays, the source
and the image are effectively at infinite distances from the grating.

3. How are the commercial gratings are made?
A commercial gratings is made by pouring properly diluted cellulose acetate on the actual grating and
dry..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
ion has many holes (majority carriers) from the impurity atoms and only a few thermally generated free electrons (minority carriers).
 The n region has many free electrons (majority carriers) from the impurity atoms and only a few thermally generated holes (minority carriers).
 Diodes (The PN Junction)
 Diodes (The Depletion Region)
 Diodes (The Barrier Potential )
 Any time there is a positive charge and a negative charge near each other, there is a force acting on the charges.
 In the depletion region there are many positive charges and many negative charges on opp..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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ics

Forward Bias --- External battery makes the Anode more positive than the Cathode --- Current flows in the direction of the arrow in the symbol.
Reverse Bias --- External battery makes the Cathode more positive than the Anode --- A tiny current flows opposite to the arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it.
Would like to ..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
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The band structure of n-ZnO/p-Si at the hetero-
244
junction can be constructed using the Anderson
245
model
32
by assuming continuity of vacuum levels
246
and neglecting the effects of dipole and interfacial
247
states. A similar band structure has been suggested
248
for doped and pure ZnO/Si heterojunction by P Chen
249
et al.
26,33
Figures 7a and 8 show the constructed
250
band structure of the n-ZnO/p-Si heterojunction
251
fabricated at the 0.007 mbar oxygen pressure under
252
zero and forward bias, respectively. Values of the
253
band gaps of E
g
(ZnO) = 3.257 eV..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
e rectifying.
319
The maximum forward-to-reverse current ratio was
320
found to be 1000 in the applied voltage range from
321
-5 V to +5 V. The variation of the turn-on voltage
322
with oxygen pressure was modeled with the
323
Anderson model and the BM shift, which is in
324
agreement with the values of the series resistance
325
calculated across the n-ZnO/p-Si heterojunction.
326
ACKNOWLEDGEMENTS
327
We thank DAE-BRNS for a financial grant to
328
carry out this work. Thanks are also due to Drs.
329
B. N. Singh and P. Misra for their help with this
330
work. We would al..................[:=> Show Contents <=:]



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