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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction diode with ..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structu..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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create the integrated circuits (silicon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or s..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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beam of light in which the waves are coherent.

3. What are the characteristic of laser radiation?
Laser radiations have high intensity, high coherence, high monochoromation and high directionality
with less divergence.


AIR WEDGE



1.What is meant by interference of light?
When the two waves superimpose over each other, resultant intensity is modified. The modification in
the distribution of intensity in the region of superposition is called interference.

2.Is there is any energy loss in interference phenomenon?
No, there is only redistribution o..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
9. The first radio receiver using a crystal diode was built around 1900 by Greenleaf Whittier Pickard. The first thermionic diode was patented in Britain by John Ambrose Fleming (scientific adviser to the Marconi Company and former Edison employee on November 16, 1904. Pickard received a patent for a silicon crystal detector on November 20, 1906.
 At the time of their invention such devices were known as rectifiers. In 1919 William Henry Eccles coined the term diode from Greek roots; di means 'two', and ode (from odos) means 'path'.
 A semiconductor diode's current-voltage, or I-V, ch..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage across it.
Would like to “Equalize” the voltages.






..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
tions
95
as those used for the growth on the Si substrates.
96
For electrical measurements, indium metal contacts
97
were made on both p-type silicon surface and n-type
98
ZnO films, which were found to be ohmic in nature.
99
The room-temperature electrical measurements of
100
the ZnO thin films grown on the silica substrates
101
were carried out using the four-probe van der Pau
102
configuration in the Hall geometry.
103
RESULTS AND DISCUSSION
104
The thickness of the deposited ZnO films, mea-
105
sured using a stylus profiler (Dektak 6 M Stylus
106
profiler) was found..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
e increase of series resistance in the quasi-
310
neutral region of p-Si/ZnO. It is noticed that the
311
calculated values of series resistance thus obtained
312
increased with increasing oxygen pressure, thereby
313
increasing the turn-on voltage.
314
CONCLUSION
315
In conclusion c-axis-oriented crystalline ZnO
316
films deposited on p-type Si (100) at different oxy-
317
gen pressures using PLD form effective n-ZnO/p-Si
318
heterojunctions, which were found to be rectifying.
319
The maximum forward-to-reverse current ratio was
320
found to be 1000 in the applied voltage ..................[:=> Show Contents <=:]



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