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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction diode with..................[:=> Show Contents <=:]



course viva questions for b tech computer science


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Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android based Cloud compu..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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licon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less than one p..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
ntial, recombination can once again proceed resulting in substantial electric current through the p-n junction. For silicon diodes, the built-in potential is approximately 0.6 V. Thus, if an external current is passed through the diode, about 0.6 V will be developed across the diode such that the P-doped region is positive with respect to the N-doped region and the diode is said to be 'turned on' as it has a forward bias.
 In a normal silicon diode at rated currents, the voltage drop across a conducting diode is approximately 0.6 to 0.7 volts. The value is different for other diode types -..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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unction Diode Characteristics

Forward Bias --- External battery makes the Anode more positive than the Cathode --- Current flows in the direction of the arrow in the symbol.
Reverse Bias --- External battery makes the Cathode more positive than the Anode --- A tiny current flows opposite to the arrow in the symbol.

Series-Connected Diodes

Use 2 diodes in series to withstand higher reverse breakdown voltage.
Both diodes conduct the same reverse saturation current, Is.

Diode Characteristics
Due to differences between devices, each diode has a different voltage ac..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
sure.
302
The variation of the turn-on voltage with oxygen
303
pressure can also be explained with calculated
304
values of series resistance. Due to series resistance,
305
a part of the applied voltage is effectively wasted
306
and hence a larger applied voltage is necessary to
307
achieve the same level of current compared to the
308
ideal value. Hence the turn-on voltage will increase
309
with the increase of series resistance in the quasi-
310
neutral region of p-Si/ZnO. It is noticed that the
311
calculated values of series resistance thus obtained
312
increased with..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
sed
from
3.45 · 10
5
ohm
to
Fig. 1. XRD pattern of ZnO films deposited on (a) p-silicon (100) and
(b) silica substrates.
Fig. 2. (a) The series resistance and the variation of the optical band
gap with oxygen pressure and (b) a plot of resistivity and mobility
with oxygen pressure.
Ajimsha, Jayaraj, and Kukreja
Journal :
11664_JEM
Dispatch :
18-12-2007
Pages : 6
h LE
h TYPESET
Article No.: 365
h CP
h DISK
4
4
Author ProofPage 3

UNCORRECTE
D
PROOF
145
5.6 · 10
5
ohm with increasing oxygen partial pres-
146
sure from 0.003 mbar to 0.007 mbar. Fi..................[:=> Show Contents <=:]



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