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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions pn junction di..................[:=> Show Contents <=:]



course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ductor has resistivity values of order 105 to 100 Ωm.
A semiconductor, such as silicon, has properties somewhere between those of a conductor and an insulator. The ability of a semiconductor to conduct electricity can be changed dramatically by adding small numbers of a different element to the semiconductor crystal. This process is called doping.
Devices made from semiconductor material form the basis of electronics devices like radio, TV, computer, mobile.


IC- FABRICATION TECHNOLOGY
2.1 Introduction:-
To realize Semiconductor devices or an integrated circuit an adeq..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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ate on the actual grating and
drying it to a thin strong film. The film is detached from the original grating and is mounted between
two glass plates. A commercial grating is called replica grating. In our experiment we use plane type
replica grating.


..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
ergy must be applied to get the electrons to move across the barrier of the electric field in the depletion region.
Diodes (Forward Bias )
 Since unlike charges attract, the positive side of the bias-voltage source attracts the electrons from the N-Region into the P-Region.
 The holes in the P-Region provides a medium for electrons to move through the P-Region. The electrons move from hole to hole on to the left.
 As they move they leave holes behind. The holes ellectively not actually move towards the pn junction.
 This is called hole current.
Effect of Forward ..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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irection of the arrow in the symbol.
Reverse Bias --- External batter..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
oxygen pressure. It was also observed
214
from the XPS data that increase of oxygen pressure
215
during deposition enhanced the O/Zn ratio in the ZnO
216
thin films. From the XPS and Hall measurement data
Fig. 3. The variation of the electron concentration in the ZnO films
(obtained from the Hall measurement and theoretical model using
the BM shift) with oxygen pressure.
Fig. 4. XPS of O 1s ZnO thin films deposited at 0.007 mbar and
0.003 mbar oxygen pressures.
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown
by Pulsed Laser Deposition at Different Oxygen Press..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
-type Si, which has many advanta-
48
ges such as low cost, large wafer size, and the pos-
49
sibility of integrating oxide semiconductors with
50
already highly matured silicon technology.
51
The growth of ZnO on Si substrates has been
52
studied extensively including the epitaxial growth
53
of ZnO on Si (100) substrates,
21
ZnO/p-Si
54
diodes,
22“24
ZnO:N/p-Si heterostructures
25
etc.
55
Studies on the electrical transport properties of
56
ZnO/p-Si heterojunctions with different dopants in
57
the p-Si
26
and ZnO
27
have also been reported
58
recently. How..................[:=> Show Contents <=:]



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