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viva questions p n junction experiment with answer


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Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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course viva questions for b tech computer science


Posted by:
Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax algorithm, Data structures, Operating system, Android based Cloud ..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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ing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.


. FABRICATION OF SILICON P-N JUNCTION DIODE

3.1 Introduction:-
The P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. The first and foremost requirement is to obtain an extremely pure germanium or silicon. Impurity of less than one part in ten billion (1010) is required for most semiconductor device fabrication to-day.

3.2 Wafer Specification:-
A typical wafer is ..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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diffraction grating?
A plane transmission diffraction grating is an optically plane parallel glass plate on which equidistant,
extremely close grooves are made by ruling with a diamond point.

2. In our experiment. What class of diffraction does occur and how?
Fraunhofer class of diffraction occurs. Since the spectrometer is focused for parallel rays, the source
and the image are effectively at infinite distances from the grating.

3. How are the commercial gratings are made?
A commercial gratings is made by pouring properly diluted cellulose acetate on the actual gr..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
to the I-V characteristics image, in the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range) for all reverse voltages up to a point called the peak-inverse-voltage (PIV). Beyond this point a process called reverse breakdown occurs which causes the device to be damaged along with a large increase in current. For special purpose diodes like the avalanche or zener diodes, the concept of PIV is not applicable since they have a deliberate breakdown beyond a known reverse current such that the reverse voltage is clamped to a known va..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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has a different voltage across it.
Would like to “Equalize” the voltages.






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Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
4
The pulsed laser deposition (PLD) of the ZnO
75
films was carried out in a growth chamber, which
76
was first evacuated to a base pressure of 10
-6
mbar.
77
A polycrystalline, stoichiometric, sintered (for 5 h at
78
1200°C) pellet of ZnO with a purity of 99.999% was
79
used as the target for PLD. The third harmonics
80
(355 nm) of a Q-switched Nd:YAG laser with a
81
repetition rate of 10 Hz, pulse width of 9 ns, and
82
fluence of about 3 J/cm
2
per pulse was used for
83
ablation of the ZnO target. Cleaned p-type silicon
84
(100) wafers with a carrier concentr..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
and M. Hirano, J. Appl. Phys. 89, 5720
345
(2001).
346
7. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid
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Films 236, 27 (1993).
348
8. R.L. Hoffman, B.J. Norris, and J.F. Wager, Appl. Phys. Lett.
349
82, 733 (2003).
350
9. P. Misra, T.K. Sharma, S. Porwal, and L.M. Kukreja, Appl.
351
Phys. Lett. 89, 161912 (2006).
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10. J. Aranovich, A. Ortiz, and R.H. Bube, J. Vac. Sci. Technol.
353
16, 994 (1979).
354
11. K.A. Vanaja, R.S. Ajimsha, A.S. Asha, and M.K. Jayaraj,
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Appl. Phys. Lett. 88, 1 (2006).
356
12. R.S.Ajimsha,K.A. Vanaja,M.K.Jayaraj,P.Misra,V.K.D..................[:=> Show Contents <=:]



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