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viva questions p n junction experiment with answer


Posted by:
Created at: Sunday 14th of October 2012 09:00:36 AM
Last Edited Or Replied at :Sunday 14th of October 2012 09:00:36 AM
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viva questions..................[:=> Show Contents <=:]



course viva questions for b tech computer science


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Created at: Saturday 29th of September 2012 09:17:17 PM
Last Edited Or Replied at :Saturday 29th of September 2012 09:17:17 PM
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Minimax alg..................[:=> Show Contents <=:]



Fabrication of P-N JUNCTION DIODE


Posted by: seminar addict
Created at: Thursday 02nd of February 2012 12:54:46 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:11 AM
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er, mobile.


IC- FABRICATION TECHNOLOGY
2.1 Introduction:-
To realize Semiconductor devices or an integrated circuit an adequate set of technological steps is required that allows the realization of the same on top surface of a semiconductor wafer.

IC fabrication technology is the process used to create the integrated circuits (silicon chips) that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semico..................[:=> Show Contents <=:]



Physics Lab Viva Voce Questions and its answers Laser Parameters


Posted by: seminar addict
Created at: Monday 16th of January 2012 03:57:19 AM
Last Edited Or Replied at :Monday 12th of May 2014 11:34:12 AM
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intensity in the region of superposition is called interference.

2.Is there is any energy loss in interference phenomenon?
No, there is only redistribution of energy ie, energy from dark places is shifted to bright places

3.What are interference fringes?
They are alternately bright and dark patches of light obtained in the region of superposition of two wave
trains of light.


SPECTROMETER GRATING

1.what is plane transmission diffraction grating?
A plane transmission diffraction grating is an optically plane parallel glass plate on which equidistant,..................[:=> Show Contents <=:]



Junction Diode


Posted by: seminar class
Created at: Thursday 07th of April 2011 02:27:20 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:00 AM
pn junction diode, special purpose diode ppt , pm junction diode,
e 'turned on' as it has a forward bias.
 In a normal silicon diode at rated currents, the voltage drop across a conducting diode is approximately 0.6 to 0.7 volts. The value is different for other diode types - Schottky diodes can be as low as 0.2 V and light-emitting diodes (LEDs) can be 1.4 V or more (Blue LEDs can be up to 4.0 V). Referring to the I-V characteristics image, in the reverse bias region for a normal P-N rectifier diode, the current through the device is very low (in the µA range) for all reverse voltages up to a point called the peak-inverse-voltage (PIV). Beyond this poi..................[:=> Show Contents <=:]



PN-Junction Diode Characteristics ppt


Posted by: seminar surveyer
Created at: Saturday 22nd of January 2011 02:22:00 AM
Last Edited Or Replied at :Thursday 08th of November 2012 01:26:22 AM
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erse Bias --- External battery makes the Cathode more positive than the Anode --- A tiny current flows opposite..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:37:49 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:37:49 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, band structure of zno si heterostructure , heterojunction in zno p si pdf, band parameter of semiconducter used in heterostructure , diode bas sur zno si n heterojonction these, l heterojonction zno si pdf , zno si heterojunctions,
s Processing Division, Raja Ramanna Centre
10
for Advanced Technology, Indore 452013, India. 3.”e-mail: [email protected]
11
Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabricated by
12
pulsed laser deposition of ZnO films on p-Si substrates in oxygen ambient at
13
different pressures. These heterojunctions were found to be rectifying with a
14
maximum forward-to-reverse current ratio of about 1,000 in the applied
15
voltage range of -5 V to +5 V. The turn-on voltage of the heterojunctions was
16
found to depend on the ambient oxygen pressure during the grow..................[:=> Show Contents <=:]



Electrical Characteristics of n-ZnOp-Si Heterojunction Diodes


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:34:37 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:34:37 PM
Diodes, Heterojunction , n ZnOp Si, Characteristics , Electrical, impedance heterojunction ,
pulse width of 9 ns, and
82
fluence of about 3 J/cm
2
per pulse was used for
83
ablation of the ZnO target. Cleaned p-type silicon
84
(100) wafers with a carrier concentration of about
85
1 · 10
15
cm
-3
were used as substrates. The growth
86
chamber was filled with flowing oxygen ambient
87
and its pressure was varied from 0.003 mbar to
88
0.007 mbar during the growth of different samples.
89
The substrate-to-target distance was kept at about
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4.5 cm. The ZnO films were deposited for about
91
30 min on the Si substrates at room temperature.
92
To measure..................[:=> Show Contents <=:]



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