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ELECTRON SCATTERING RESISTIVITY OF METALS ppt


Posted by: seminar surveyer
Created at: Tuesday 04th of January 2011 04:09:15 AM
Last Edited Or Replied at :Tuesday 04th of January 2011 04:09:15 AM
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hus we can say that T is extremely small for monovalent metals.
from eqn. given below we can calculate mean free path λ-

λ = Vx * ťc ----------(2)


The relaxation time ť for metals refers to e- with Fermi velocity Vf .For usual values of temp. T , it may be shown that the scattering in these monovalent metals is isotropic . Then, ť=tc & λ = Vx * ťc .The values of man free path at 0 0c are several hundred angstroms.

We find from the graph shown that as we goes on reducing the temp of a metal then it’s resistivity a..................[:=> Show Contents <=:]



SEASONAL INFLUENCES ON SAFETY OF SUBSTATION GROUNDING SYSTEMS full report


Posted by: computer science technology
Created at: Thursday 21st of January 2010 01:13:25 AM
Last Edited Or Replied at :Saturday 25th of February 2012 12:39:46 AM
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the resistivity of the affected surface soil layer is changed in the range of 10 to 200 m to consider the influence of raining season on the surface soil layer. In freezing season, there is a freezing surface soil layer with increased resistivity, the resistivity of the affected surface soil layer is changed in the range of 200 to 5000 m to consider the influence of freezing season on the surface soil layer. The resistivity of the granite layer in raining season is assumed as 5000 m and its resistivity in normal condition and in freezing season is assumed as 15000 m.
3. ANALYSIS MODEL OF GRO..................[:=> Show Contents <=:]



Journal of Alloys and Compound JALCOM -


Posted by: seminar projects crazy
Created at: Saturday 13th of June 2009 03:43:16 PM
Last Edited Or Replied at :Saturday 13th of June 2009 03:43:16 PM
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4
and Zn in Zn
2
GeO
4
. The phosphor can be used as an
active layer in alternating current thin film electroluminescent
(ACTFEL) devices.
Acknowledgements
This work has been supported by Department of science and
Technology. One of the authors, KMK, wishes to thank CSIR
for the grant of fellowship. The authors wish to thank Dr. S.
Jayalekshmi and Rajive Tomy for their help during this work.
References
T. Minami, Solid State Electron. 47 (2003) 2237“2243.
A.H. Kitai, Thin Solid Films 445 (2003) 367“376.
S. Park, G.S. Herman, D.A. Keszler, J. Solid Stat..................[:=> Show Contents <=:]



SEMINAR REPORT On Giant Magnetoresistance Effect


Posted by: Computer Science Clay
Created at: Saturday 13th of June 2009 02:36:40 PM
Last Edited Or Replied at :Saturday 13th of June 2009 02:36:40 PM
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density of existing memory
technologies -- notably Flash RAM and DRAM -- kept MRAM in a niche role in the
market, but its proponents believe that the advantages are so overwhelming that MRAM
will eventually become dominant.
Unlike conventional RAM chip technologies,
in MRAM data is not stored as electric charge or current flows, but by magnetic storage
elements. The elements are formed from two ferromagnetic plates, each of which can
hold a magnetic field, separated by a thin insulating layer. One of the two plates is a
permanent magnet set to a particular polarity; the other's..................[:=> Show Contents <=:]



ANALYSIS OF RESIDUAL STRESSES IN MAIN CRANKSHAFT BEARINGS AFTER INDUCTION SURFACE


Posted by: computer science crazy
Created at: Friday 17th of April 2009 07:52:50 AM
Last Edited Or Replied at :Friday 21st of December 2012 11:11:44 PM
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anufacturing of crankshafts is finish grinding in order to achieve the desirable condition at the surface and in the surface layer, i.e.:

1. The grinding residual stresses must be compressive or lowest tensile so that the favourable residual stress profile obtained by induction surface hardening of the surface layer is maintained.

2. There must be the smallest changes possible in the microstructure and thus also in the hardness and microhardness profiles in the heat-affected zone after finish grinding.

Microstructural changes depends on:

¢ Contact zone


Temperature variation..................[:=> Show Contents <=:]



HIGH TEMPERATURE SUPER CONDUCTIVITY


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 01:28:20 PM
Last Edited Or Replied at :Friday 30th of January 2009 01:28:20 PM
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uctivity (HTS) w..................[:=> Show Contents <=:]



EXTRAORDINARY MAGNETO RESISTANCE


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 01:20:50 PM
Last Edited Or Replied at :Friday 30th of January 2009 01:20:50 PM
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e extent. In the present world scenario this technology is a much awaited one as it can really revolutionize the data handling speeds. Extraordinary magnetoresistance is that property of material which exhibits dramatically high levels of magnetoresistance...................[:=> Show Contents <=:]



Tamper Resistance


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:38:04 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:38:04 PM
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e implemented in the storage system rather than at the application level...................[:=> Show Contents <=:]



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