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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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nd other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,

• Diffusion areas will no longer be separated by a low doped channel region.
• Equivalent gate oxide thickness will fall below the tunneling limit.
• Lithography costs will increase exponentially.
Mathematical Model of CNTFET
• Consider Vds and ψS
• Compute the total charge on the nanotubes for a given Vds and ψS
Conclusion
From Experimental Characterization:
 The length of CNTs are lying in the range of 2-5 micrometers (most of them in the range of 3-4 µm).
 The diameter of CNTs are lying in the range of 10-70 nanometers (most of them in the ran..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
impatt diode ppt , impatt diode, what is impatt , impatt diode structure, ppt on impatt diodes , principle of operation of an impatt diode, impatte diode in pdf , impatt diode applications, gunn diode characteristics ppt , impatt diode characteristics, pdf of impatt diode charesteristic n operation , impatt ppt, characteristics of impatt diodes , impatt diode i v characteristic, ppt for impatt diode , ppt on impatt diode, impatt diode working ppt , ppt impatt diode, impatt , impatt dioade, ppt of microwave impatt diode , operation of impatt diode, impatt diode based projects , impatt negative resistance, noises in gunn devices ppt microwave devices and circuits , read diode ppt,
s travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Frequency depends on device th..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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reduction), accurate externally set current limit,remote ON/OFF, synchronization to an external lower frequency, and frequency selection (132 kHz/66 kHz).
TOPSwitch-GX Family Functional Description
Like TOPSwitch, TOPSwitch-GX is an integrated switched mode power supply chip that converts a current at the control input to a duty cycle at the open drain output of a high voltage power MOSFET. During normal operation the duty cycle of the power MOSFET decreases linearly with increasing CONTROL pin current Three terminals, FREQUENCY, LINE-SENSE, and EXTERNAL CURRENT LIMIT (available in Y, R or ..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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strongly upon the voltage stress. When it is reduced, eg by one third, the average lifetime of the device is increased by a factor of about 20.
3. The in corporation of redundant devices reduces the risk of shoot-through in a converter phase, thereby allowing fuse less high-power converters phase, thereby allowing fuse less high-power converters to be built. The fuse less design improves converter reliability and efficiency. Thus shoot-through in a converter phase is very unlikely. Nevertheless, the converter is constructed to withstand the stresses during such fault conditions.


A..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate commutated thyristorz....plz ..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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icroseconds during turn-off.

To stop the cathode (n) from taking part in the process, the bias of the cathode n-p junction has to be reversed before voltage starts to build up at the main junction. This calls for commutation of the full load current from the cathode (n) to the gate (p) within one microsecond. Thanks to a new housing design, 4000A/us can be achieved with a low cost 20V gate unit. Current filamentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT technology brings together the power handling device (..................[:=> Show Contents <=:]



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