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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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ht increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche breakdown condition exhibits negative resistance characteristics in the microwave frequency range.
Since the negative resistance is based upon avalanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original suggestion for a microwave device employing transit-time effect was made by W. T. Read and involved ..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
l Model of CNTFET
• Consider Vds and ψS
• Compute the total charge on the nanotubes for a given Vds and ψS
Conclusion
From Experimental Characterization:
 The length of CNTs are lying in the range of 2-5 micrometers (most of them in the range of 3-4 µm).
 The diameter of CNTs are lying in the range of 10-70 nanometers (most of them in the range of 30-50 nm).
From Theoretical Characterization:
 Conductance for metallic NTs is much larger in comparison to the semiconducting and the semimetallic NTs.
 Characteristics symmetric on both the sides and almo..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Frequency depends on device thic..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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der development)
Violet 400 < < 450 2.76 < V < 4.0 Indium gallium nitride (InGaN)
Purple multiple types 2.48 < V < 3.7 Dual blue/red LEDs,
blue with red phosphor,
or white with purple plastic
Ultraviolet < 400 3.1 < V < 4.4 diamond (C)
Aluminium nitride (AlN)
Aluminium gallium nitride (AlGaN)
Aluminium gallium indium nitride (AlGaInN) ” (down to 210 nm)
White Broad spectrum V = 3.5 Blue/UV diode with yellow phosphor
Ultraviolet and blue LEDs
Blue LEDs.
Blue LEDs are based on the wide band gap semiconductors GaN (gallium nitride) and InGaN (indium gallium nitride). They ..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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gate turn off current (750a at 3kA turn off) has to be pumped into a 300-nh gate circuit inductance. This requires a high gate charge (Q) per pulse (Q=0.5ts*Ig ; where t is the storage time and Ig the peak turn off current).Also high losses are produced at the output MOSFETs.
2. The high gate back porch current(typically 4to8 a for a 3-kA device) that is required, especially at low temperatures.
Considerably lower demands are made on the new GCT gate drives with respect to these characteristics;
3. The storage time t is reduced by a factor of approximately 20.Despite the increase in the..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate commutated thyris..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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sistor at turn- off.

The IGCT (Integrated GCT) is the combination of the GCT device and a low inductance gate unit. This technology extends transistor switching performance to well above the MW range, with 4.5kV devices capable of turning off 4kA, and 6kV devices capable of turning off 3kA without snubbers. The IGCT represents the optimum combination of low loss thyristor technology and snubberles gate effective turn off for demanding medium and high voltage power electronics applications.

The thick line shows the variation of the anode voltage during turn-off. The lighter shows the vari..................[:=> Show Contents <=:]



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