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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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tive resistance is based upon avalanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original suggestion for a microwave device employing transit-time effect was made by W. T. Read and involved an n+-p-i-p+ structure such as that shown in figure. This device operates by injecting carriers into the drift region and is called an IMPATT diode.
The device consists essentially of two regions:
1) the n+p region, at which avalanche multiplication occurs, and
2..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
cles that respond strongly and collectively to electromagnetic fields
 Also called as ionized gas.
Plasma ..a good thought..
• High temperature process: ceramic nanoparticles can be synthesized.
• Plasma promotes high rates of chemical reaction.
• Yields high purity products.
• High vacuum condition not needed.
• Low synthesis time scales as compared to chemical methods.
Experimental Characterization using SEM
Sample for SEM
Results from analysis
• Theoretical Characterization
I-V Characteristics of CNT
• Virtual nanolab..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
impatt diode ppt , impatt diode, what is impatt , impatt diode structure, ppt on impatt diodes , principle of operation of an impatt diode, impatte diode in pdf , impatt diode applications, gunn diode characteristics ppt , impatt diode characteristics, pdf of impatt diode charesteristic n operation , impatt ppt, characteristics of impatt diodes , impatt diode i v characteristic, ppt for impatt diode , ppt on impatt diode, impatt diode working ppt , ppt impatt diode, impatt , impatt dioade, ppt of microwave impatt diode , operation of impatt diode, impatt diode based projects , impatt negative resistance, noises in gunn devices ppt microwave devices and circuits , read diode ppt,
on for a microwave device employing transit-time effect was made by W. T. Read and involved an n+-p-i-p+ structure such as that shown in figure. This device operates by injecting carriers into the drift region and is called an IMPATT diode.
The device consists essentially of two regions:
1) the n+p region, at which avalanche multiplication occurs, and
2) the i (essentially intrinsic) region, through which generated holes must drift in moving to p+ contact.


Principle of operation


IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPA..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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lium nitride of varying AlN fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of the InGaN-GaN blue/green devices. If the active quantum well layers are GaN, as opposed to alloyed InGaN or AlGaN, the device will emit near-ultraviolet light with wavelengths around 350“370 nm. Green LEDs manufactured from the InGaN-GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems.
White light
There are two primary w..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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he full load current from the cathode (n) to the gate (p) within one microsecond. Thanks to a new housing design, 4000A/us can be achieved with a low cost 20V gate unit. Current filamentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.
FABRICATION
IGCT technology brings together the power handling device (GCT) and the device control circuitry (freewheeling diode and gate drive) in an integrated package. By offering four levels of component packaging and integration, it permits simultaneous improvement in..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate commutated thyristorz....plz do..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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up at the main junction. This calls for commutation of the full load current from the cathode (n) to the gate (p) within one microsecond. Thanks to a new housing design, 4000A/us can be achieved with a low cost 20V gate unit. Current filamentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT technology brings together the power handling device (GCT) and the device control circuitry (freewheeling diode and gate drive) in an integrated package. By offering four levels of component packaging and integration, it permits si..................[:=> Show Contents <=:]



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