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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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, and
2) the i (essentially intrinsic) region, through which generated holes must drift in moving to p+ contact.


Principle of operation


IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift ..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
e total charge on the nanotubes for a given Vds and ψS
Conclusion
From Experimental Characterization:
 The length of CNTs are lying in the range of 2-5 micrometers (most of them in the range of 3-4 µm).
 The diameter of CNTs are lying in the range of 10-70 nanometers (most of them in the range of 30-50 nm).
From Theoretical Characterization:
 Conductance for metallic NTs is much larger in comparison to the semiconducting and the semimetallic NTs.
 Characteristics symmetric on both the sides and almost a linear relationship is obtained in metallic NTs.




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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Frequency depends on device thickness

IMPact Ionization Transit Time
IMPATT devices can be used for oscillator and amplifier applications
They can be fabricated with Si, GaAs, and InP
Can be used up 400 GHz.
Noisy oscillator
In general, IM..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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LED Driver¦¦¦¦¦¦¦¦¦¦...........33
17) Tiny Switch-PK-Power Integrations¦¦¦¦¦¦¦¦¦¦¦¦¦....36
a) Functional Block Diagram¦¦¦¦¦¦¦¦¦¦¦¦¦¦.........36
b) Description¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦.. .....37
c) Typical Standby Application¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦....37
d) Special Features¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦¦...37
e) Features & Benefits of Ti..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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verters phase, thereby allowing fuse less high-power converters to be built. The fuse less design improves converter reliability and efficiency. Thus shoot-through in a converter phase is very unlikely. Nevertheless, the converter is constructed to withstand the stresses during such fault conditions.


APPLICATIONS OF IGCT
The core of IGCT performance advantage is its ability to turn off in 2 microseconds and conduct like a thyristor. IGCT technology therefore permits simple inverter designs with half the losses of alternative technologies. For the first time, a power silicon tech..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe m..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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np device i.e. a transistor, for the few critical microseconds during turn-off.

To stop the cathode (n) from taking part in the process, the bias of the cathode n-p junction has to be reversed before voltage starts to build up at the main junction. This calls for commutation of the full load current from the cathode (n) to the gate (p) within one microsecond. Thanks to a new housing design, 4000A/us can be achieved with a low cost 20V gate unit. Current filamentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT tec..................[:=> Show Contents <=:]



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