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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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Diode

Introduction

When the pn junction diode is reverse-biased, then current does not flow.
However when the reverse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche breakdown condition exhibits negative resistance characteristics in the microwave frequency range.
Since the negative resistance is based upon avalanche multiplicati..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,

 Conductance for metallic NTs is much larger in comparison to the semiconducting and the semimetallic NTs.
 Characteristics symmetric on both the sides and almost a linear relationship is obtained in metallic NTs.





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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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alanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original suggestion for a microwave device employing transit-time effect was made by W. T. Read and involved an n+-p-i-p+ structure such as that shown in figure. This device operates by injecting carriers into the drift region and is called an IMPATT diode.
The device consists essentially of two regions:
1) the n+p region, at which avalanche multiplication occurs, and
2) the i (essentially intrinsic) ..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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emitting diodes form the numbers on digital clocks, send data from remote controls and light up traffic signals. See more solid state electronics pictures.
Advantages
¢ Efficiency: LEDs produce more light per watt than incandescent bulbs.
¢ Color: LEDs can emit light of an intended color without the use of color filters that traditional lighting methods require. This is more efficient and can lower initial costs.
¢ Size: LEDs can be very small (smaller than 2 mm) and are easily populated onto printed circuit boards.
¢ On/Off time: LEDs light up very quickly. A typical red ind..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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omponents:
1. 6 IGCT
2. 1 inductor
3. 1 clamp diode
4. 1 clamp capacitor (for high-inductive DC link only)
5. 1 clamp resistor
6. 1 gate-drive power supply


The capacitor connected at the input terminals tends to make the input dc voltage constant. This capacitor also suppresses the harmonic fed back to the source. The output voltage waveforms are similar to that of a three-phase bridge inverter.

Output waveforms of 3 phase inverters


EXPLANTION OF POWER RANGE BY SEVERAL 100 MVA
Typical maximum values for GTO technology are at present 6kV for the dynamic blocking v..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT technology brings together the power handling device (GCT) and the device control circuitry (freewheeling diode and gate drive) in an integrated package. By offering four levels of component packaging and integration, it permits simultaneous improvement in four interrelated areas; low switching and conduction losses at medium voltage, simplified circuitry for operating the power semiconductor, reduced power system cost, and enhanced reliability and availability. Also, by pro..................[:=> Show Contents <=:]



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