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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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gle drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators for many applications like:-
..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
carbon nanotube and placing it between two gold electrodes with gold-cnt distance between 2.002 Å to 2.027 Å.
• IV characteristics are observed by changing the (n,m) values of the chiral vector
Scaling Obstacles
• Diffusion areas will no longer be separated by a low doped channel region.
• Equivalent gate oxide thickness will fall below the tunneling limit.
• Lithography costs will increase exponentially.
Mathematical Model of CNTFET
• Consider Vds and ψS
• Compute the total charge on the nanotubes for a given Vds and ψS
Conclusion
From Exper..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
impatt diode ppt , impatt diode, what is impatt , impatt diode structure, ppt on impatt diodes , principle of operation of an impatt diode, impatte diode in pdf , impatt diode applications, gunn diode characteristics ppt , impatt diode characteristics, pdf of impatt diode charesteristic n operation , impatt ppt, characteristics of impatt diodes , impatt diode i v characteristic, ppt for impatt diode , ppt on impatt diode, impatt diode working ppt , ppt impatt diode, impatt , impatt dioade, ppt of microwave impatt diode , operation of impatt diode, impatt diode based projects , impatt negative resistance, noises in gunn devices ppt microwave devices and circuits , read diode ppt,
of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver power.
Applications
These diodes make excellent microwave generators ..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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g the same brightness
at a lower power,which helps extend the
Battery life.
Z-Power LED
Size : Ø 12 mm×6.54 mm
Features : -A single LED package providing
the world's highest brightness of 900 lm
and the efficacy of 90 lm/W
-Ultra slim size, super high luminous efficacy,
and low electricity consumption to replace the conventional bulbs.
Z Power Led P5-II

Part No. : F50360
Size : 6.0*5.0*1.0mm
Features : - Provides Full color
- Using 3 RGB Power Chips
- Suitable for decoration lighting.
Z Power Led Z1
Part No. : WZ10150, NZ10150
Size : 5.0*6.0*1...................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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pplications extending into the kHz range. A new IGCT device family with integrated high- power diodes has been developed for applications in the 0.5-6 MVA range, extending to several 100 MVA with series and parallel connections. A first 100 MVA inverter based on the IGCT has been in commercial operation and confirms the very high level of reliability of this new technology. Other new application using the IGCT platform includes ABBâ„¢s new ACS1000 drive for medium voltage applications.

INTRODUCTION
Thyristor technology is inherently superior to transistor for blocking voltage values a..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate commutated thy..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO being constrained by a variety of unsatisfactory compromises. The widely used standard GTO drive technology results in inhomogenous turn-on and turn-off that call for costly dv/dt and di/dt snubber circuits combined with bulky gate drive u..................[:=> Show Contents <=:]



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