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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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erse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche breakdown condition exhibits negative resistance characteristics in the microwave frequency range.
Since the negative resistance is based upon avalanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original sugge..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
Set up Description
• Stainless steel cylindrical chamber
• 2 ports, one is used for observing the events and another is used for doing the initial adjustments.
• 2 flanges on the top and bottom of the surface (for the electrodes)
• Movable cathode and anode holder.
• Cooling adjustments are done using pipe
Experimental Setup
Plasma “fourth state of matter
 Distinct phase of matter
 Collection of charged particles that respond strongly and collectively to electromagnetic fields
 Also called as ionized gas.
Plasma ..a good thought..
• High..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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ture is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two juncti..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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ak mode frequency ensures the transformer can be sized for continuous load conditions rather than peak power demands.
Typical Standby Application.
Special Feature
Automatically enters into a special peak mode - doubling operating frequency and boosting current limit for the duration of the peak power requirement - TinySwitch-PK
Power Supply Control IC coaxes up to 280 percent of the design power level out of the same transformer and integrated MOSFET. The challenge in these systems is to design a power supply that can provide the necessary peaks when needed, but does not burden the applic..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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amentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.
FUSION OF POWER DEVICE AND CIRCUIT DESIGN EXPERIENCE
The IGCT technology is the result of intense collaboration between device designers at ABB semiconductors and power circuit designers at ABB industrial systems. In fact, it was the co-development of power silicon, the packaging and additional circuitry needed to make the power switch suitable for industrial applications that made the IGCTâ„¢s unique combination of characteristics possible in the first place.
..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt int..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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w cost 20V gate unit. Current filamentation is totally suppressed and the turn-off waveforms and safe operating area are identical to those of a transistor.

IGCT technology brings together the power handling device (GCT) and the device control circuitry (freewheeling diode and gate drive) in an integrated package. By offering four levels of component packaging and integration, it permits simultaneous improvement in four interrelated areas; low switching and conduction losses at medium voltage, simplified circuitry for operating the power semiconductor, reduced power system cost, and enhance..................[:=> Show Contents <=:]



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