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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposite directions and deliver p..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
promotes high rates of chemical reaction.
• Yields high purity products.
• High vacuum condition not needed.
• Low synthesis time scales as compared to chemical methods.
Experimental Characterization using SEM
Sample for SEM
Results from analysis
• Theoretical Characterization
I-V Characteristics of CNT
• Virtual nanolab is used for Characterization.
• Simulations run on it by selecting the carbon nanotube and placing it between two gold electrodes with gold-cnt distance between 2.002 Å to 2.027 Å.
• IV characteristics are ..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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everse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche breakdown condition exhibits negative resistance characteristics in the microwave frequency range.
Since the negative resistance is based upon avalanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original sug..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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s and tell you when your appliances are turned on. Collected together, they can form images on a jumbo television screen or illuminate a traffic light.
Basically, LEDs are just tiny light bulbs that fit easily into an electrical circuit. But unlike ordinary incandescent bulbs, they don't have a filament that will burn out, and they don't get especially hot. They are illuminated solely by the movement of electrons in a semiconductor material, and they last just as long as a standard transistor.
ImageGallery
Light emitting diodes form the numbers on digital clocks, send data from remote con..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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and buffer layer of the GCT allows a thinner n-base layer. This permits integration of the freewheeling diode in the same structure, plus snubbreless operation in combination with low inductive packaging and gate drive circuitry.
THE SECRET OF IGCT TECHNOLOGY
In IGCT technology, a combination of design innovations permits the thousands of individual power switching structures in a modified GTO thyristor to switch fast and simultaneously. What is more, the low on and off-state losses inherent in thyristor designs are retained.
The first of two key innovations is the..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated ..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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ge, with 4.5kV devices capable of turning off 4kA, and 6kV devices capable of turning off 3kA without snubbers. The IGCT represents the optimum combination of low loss thyristor technology and snubberles gate effective turn off for demanding medium and high voltage power electronics applications.

The thick line shows the variation of the anode voltage during turn-off. The lighter shows the variation of the anode current during turn-off process of IGCT.

GTO and thyristor are four layer (npnp) devices. As such, they have only two stable points their characteristics-'on' and 'off'. Every st..................[:=> Show Contents <=:]



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