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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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trinsic) region, through which generated holes must drift in moving to p+ contact.


Principle of operation


IMPATT diode
IMPATT I-V Characteristics
Small Signal model
Some IMPATT Circuits
Classification
Device structure is based on the doping profile. The three basic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for hole..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
Arc Plasma Method
Set up Description
• Stainless steel cylindrical chamber
• 2 ports, one is used for observing the events and another is used for doing the initial adjustments.
• 2 flanges on the top and bottom of the surface (for the electrodes)
• Movable cathode and anode holder.
• Cooling adjustments are done using pipe
Experimental Setup
Plasma “fourth state of matter
 Distinct phase of matter
 Collection of charged particles that respond strongly and collectively to electromagnetic fields
 Also called as ionized gas.
Plasma ..a ..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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or many applications like:-
1. Parametric amplifier,
2. Parametric up converter,
3. Parametric down converter,
4. Negative resistance parametric amplifier.
Summary
IMPATT stands for Impact Avalanche And Transit Time
Operates in reverse-breakdown (avalanche) region
Applied voltage causes momentary breakdown once per cycle
This starts a pulse of current moving through the device
Frequency depends on device thickness

IMPact Ionization Transit Time
IMPATT devices can be used for oscillator and amplifier applications
They can be fabricated with Si,..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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transition which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible or near-ultraviolet light.
LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have made possible the production of devices with ever-shorter wavelengths, producing light in a variety of colors.
LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, whil..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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ages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new IGCT device family with integrated high- power diodes has been developed for applications in the 0.5-6 MVA range, extending to several 100 MVA with series and parallel connections. A first 100 MVA inverter..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate commutated thyristorz....plz do help me......................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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her applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has resulted in GTO being constrained by a variety of unsatisfactory compromises. The widely used standard GTO drive technology results in inhomogenous turn-on and turn-off that call for costly dv/dt and di/dt snubber circuits combined with bulky gate drive units.

Rooting from the GTO is one of the newest power switches, the Gate-Commutated Thyristor (GCT). It successfully combines the best of the thyristor and trans..................[:=> Show Contents <=:]



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