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IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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ion in the avalanche breakdown condition exhibits negative resistance characteristics in the microwave frequency range.
Since the negative resistance is based upon avalanche multiplication and transit-time effect of carriers, the device has been called the IMPATT (Impact Avalanche Transit-Time) Diode.
Device Structure

The original suggestion for a microwave device employing transit-time effect was made by W. T. Read and involved an n+-p-i-p+ structure such as that shown in figure. This device operates by injecting carriers into the drift region and is called an IMPATT diode.
The dev..................[:=> Show Contents <=:]



Experimental Theoretical Characterization of CNTs


Posted by: seminar class
Created at: Monday 14th of February 2011 10:29:27 PM
Last Edited Or Replied at :Monday 14th of February 2011 10:29:27 PM
charecterization of cnt ppt , cnt i v characteristics, cntfet technical seminar decomentation , plasma physics, cnt characterization , characterization of cnts,
ength of CNTs are lying in the range of 2-5 micrometers (most of them in the range of 3-4 µm).
 The diameter of CNT..................[:=> Show Contents <=:]



IMPATT Diode


Posted by: projectsofme
Created at: Tuesday 21st of December 2010 05:27:17 AM
Last Edited Or Replied at :Tuesday 21st of December 2010 05:27:17 AM
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asic types of Impatt diodes are:-
1. Single drift region (SDR) - The SDR diode consists of a single avalanche zone and a single drift zone with p+nn+ structure.
2. Double drift region (DDR) – A DDR diode has a p+pnn+ structure that consist of two drift layers, one for electrons and other for holes on either side of the central avalanche zone.
3. Double avalanche region (DAR) – The DAR diode has a p+nipn+ structure that consist of one drift zone sandwiched between two avalanche zones. The electrons and holes from the two junctions travel across the central i-region in opposi..................[:=> Show Contents <=:]



PRACTICAL TRAINING At Z-LED Light full report


Posted by: project topics
Created at: Saturday 24th of April 2010 10:22:35 AM
Last Edited Or Replied at :Saturday 24th of April 2010 10:22:35 AM
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V < 1.9
Gallium arsenide (GaAs)
Aluminium gallium arsenide (AlGaAs)
Red 610 < < 760 1.63 < V < 2.03 Aluminium gallium arsenide (AlGaAs)
Gallium arsenide phosphide (GaAsP)
Aluminium gallium indium phosphide (AlGaInP)
Gallium(III) phosphide (GaP)
Orange 590 < < 610 2.03 < V < 2.10 Gallium arsenide phosphide (GaAsP)
Aluminium gallium indium phosphide (AlGaInP)
Gallium(III) phosphide (GaP)
Yellow 570 < < 590 2.10 < V < 2.18 Gallium arsenide phosphide (GaAsP)
Aluminium gallium indium phosphide (AlGaInP)
Gallium(III) phosphide (GaP)
Green 500 < < 570 1.9 < V < 4.0 Indium gallium..................[:=> Show Contents <=:]



Integrated gate commutated thyristor IGCT Seminar REPORT


Posted by: electronics seminars
Created at: Thursday 31st of December 2009 08:04:04 AM
Last Edited Or Replied at :Thursday 31st of December 2009 08:04:04 AM
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dv/dt and di/dt snubber circuits combined with bulky gate drive units.
Rooting from the GTO is one of the newest power switches, the Gate-Commutated Thyristor (GCT). It successfully combines the best of the thyristor and transistor characteristics, while fulfilling the additional requirements of manufacturability and high reliability. The GCT is a semiconductor based on the GTO structure, whose cathode emitter can be shut off instantaneously, thereby converting the device from a low conduction-drop thyristor to a low switching loss, high dv/dt bipolar transistor at turn- off. The IGCT (Integ..................[:=> Show Contents <=:]



IGCT


Posted by: sonu
Created at: Sunday 18th of October 2009 08:57:16 AM
Last Edited Or Replied at :Tuesday 20th of October 2009 04:40:54 AM
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i wanna noe more abt integrated gate co..................[:=> Show Contents <=:]



IGCT


Posted by: computer science crazy
Created at: Tuesday 07th of April 2009 01:33:26 PM
Last Edited Or Replied at :Monday 27th of July 2009 01:55:53 AM
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ariation of the anode voltage during turn-off. The lighter shows the variation of the anode current during turn-off process of IGCT.

GTO and thyristor are four layer (npnp) devices. As such, they have only two stable points their characteristics-'on' and 'off'. Every state in between is unstable and results in current filamentation. The inherent instability is worsened by processing imperfections. This has led to the widely accepted myth that a GTO cannot be operated without a snubber. Essentially, the GTO has to be reduced to a stable pnp device i.e. a transistor, for the few critical micr..................[:=> Show Contents <=:]



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