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FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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le memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM?s, EPROM?s, and FRAM?s). Ferromagnetic cores, however, were too bulky and expensive compared to the smaller, low-power semiconductor memories. In place of ferromagnetic cores ferroelectric memories are ..................[:=> Show Contents <=:]



AFM Based Storage


Posted by: nit_cal
Created at: Friday 30th of October 2009 04:41:12 AM
Last Edited Or Replied at :Friday 30th of October 2009 04:41:12 AM
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oscopy (AFM). Tiny depressions created with an AFM tip in a polymer medium represent stored data bits that can then be read back by the same tip. Data written in this way can also be erased using the same tip, and the polymer medium can be reused thousands of times. This thermomechanical storage technique is capable of achieving data densities exceeding 1 Tb/in², well beyond the expected limits of magnetic recording. Although the read-back rate of an individual probe is limited, high data rates can still be achieved by making use of massive parallelism. In our millipede system concep..................[:=> Show Contents <=:]



Magnetoresistive RAM


Posted by: Electrical Fan
Created at: Saturday 10th of October 2009 06:08:03 AM
Last Edited Or Replied at :Saturday 10th of October 2009 06:08:03 AM
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nes, and could even replace volatile DRAM (Dynamic RAM) in PCs in the years to come...................[:=> Show Contents <=:]



Magnetic RAM


Posted by: computer science crazy
Created at: Thursday 03rd of September 2009 05:54:46 AM
Last Edited Or Replied at :Sunday 05th of February 2012 10:58:11 PM
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o a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technology, and innovated new techniques which take advantage of revolutionary advances in magnetoresistive devices, namely giant magnetoresistance and spin dependent tunneling.

Today there is a tremendous potential for MRAM as a nonvolatile, solid state memory to replace flash memory and EEPROM where fast writing or high write endurance is required, and in the longer term as a general purpose read/write random acce..................[:=> Show Contents <=:]



active pixel sensor APS


Posted by: Computer Science Clay
Created at: Saturday 28th of February 2009 11:02:54 PM
Last Edited Or Replied at :Saturday 28th of February 2009 11:02:54 PM
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e accumulated charge. Its power supply, VDD, is typically tied to the power supply of the reset transistor.

The third transistor, Msel, is the row-select transistor. It is a switch that allows a single row of the pixel array to be read by the read-out electronics.

Array: A typical two-dimensional array of pixels is organized into rows and columns. Pixels in a given row share reset lines, so that a whole row is reset at a time. The row select lines of each pixel in a row are tied together as well. The outputs of each pixel in any given column are tied together. Since only one row is selec..................[:=> Show Contents <=:]



FRAM


Posted by: Computer Science Clay
Created at: Wednesday 25th of February 2009 03:11:13 AM
Last Edited Or Replied at :Wednesday 25th of February 2009 03:11:13 AM
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displacement does not disappear in the absence of the electric field. Moreover, the direction of polarization can be reversed or reoriented by applying an appropriate electric field...................[:=> Show Contents <=:]



FRAM


Posted by: seminar projects crazy
Created at: Friday 30th of January 2009 12:16:02 PM
Last Edited Or Replied at :Friday 30th of January 2009 12:16:02 PM
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memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.

A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that provide access to the capacitor or amplify its content for a read operation. Once a cell is acce..................[:=> Show Contents <=:]



RD RAM


Posted by: computer science crazy
Created at: Sunday 21st of September 2008 11:57:02 PM
Last Edited Or Replied at :Sunday 21st of September 2008 11:57:02 PM
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sary to make considerable improvements in the memory access time.

The Rambus founders emerged with a memory technology-RD RAM. RDRAM memory provides the highest bandwidth -2.1GB/sec. per pin- from the fewest pins at five-times the speed of industry available DRAM. The RDRAM memory channel achieves its high-speed operation through several innovative techniques including separate control and address buses, highly efficient protocol, low voltage signaling, and precise clocking to minimize skew between clock and data lines. A single RDRAM device is capable of transferring data at 1066Mb/sec. p..................[:=> Show Contents <=:]



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